2023/11/24 by Imad Limame, Peter Ludewig, Limame, Imad +11 · 1 citation
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2311.14849
openalex publication_date 2023/11/24 · openalex created_date 2023/11/29 · openalex updated_date 2026/07/28
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP buffer and defect-reducing layers. These epitaxial quantum dots exhibit optical properties akin to those on traditional GaAs substrates, promising vast potential for the heteroepitaxy approach. They demonstrate strong multi-photon suppression with g(2)(τ)=(3.7± 0.2) × 10-2 and high photon indistinguishability V=(66± 19)% under non-resonance excitation. We achieve up to (18± 1)% photon extraction efficiency with a backside distributed Bragg mirror, marking a crucial step toward silicon-based quantum nanophotonics.