2014/02/13 by A. V. Sachenko, Sachenko, A. V., V. P. Kostylyov +10
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #cond-mat.mtrl-sci #solar cell performance optimization
paper · pdf · doi:10.48550/arxiv.1402.3170
32 pages, 16 figures, 3 tables
arxiv created 2014/02/13 · openalex publication_date 2014/02/13 · arxiv updated 2014/02/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We analysed self-consistently photoconversion efficiency of direct-gap A3B5 semicon-ductors based solar cells and optimised their main physical characteristics. Using gallium ar-senide (GaAs) as the example and new efficient optimization formalism, we demonstrated that commonly accepted light re-emission and re-absorption in solar cells (SC) in technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not the main factors re-sponsible for high photoconversion efficiency. As we proved instead, the doping level of the base material and its doping type as well as Shockley-Read-Hall (SRH) and surface recombination velocities are much more important factors responsible for the photoconversion. We found that the maximum photoconversion efficiency (about 27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers can be reached for p-type base doped at 2 ⋅ 1017 cm-3. The open circuit voltage VOC formation features are analyzed. The optimization provides a significant increase in VOC and the limiting photoconversion efficiency close to 30%. The approach of this research allows to predict the expected solar cells (for both direct-gap and indirect-band semiconductor) characteristics if material parameters are known. Obtained formalism allows to analyze and to optimize mass production both tandem solar cell (TSC) and one-junction SC parameters.