Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences

2017/07/04 by J. C. Lange, S. Grinstein, Lange, J. +11
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies

paper · pdf · doi:10.48550/arxiv.1707.01045

openalex publication_date 2017/07/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A new generation of 3D silicon pixel detectors with a small pixel size of 50×50 and 25×100 μm² is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to 1.4×10¹⁶ n_eq/cm². At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm² at -25^∘C, considerably lower than for previous 3D sensor generations and planar sensors.

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