2015/06/29 by Ikuo Kurachi, Kurachi, Ikuo, Kazuo Kobayashi +13
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.1506.08510
openalex publication_date 2015/06/29 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.