Study of electronic and optical properties of Si_1-xGe_xO₂ with i phase structure to find high-k

2023/10/26 by Tirandari, Mehraneh
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2311.12865

Abstract

In this work, the electronic and optical properties of Si_1-xGe_xO₂ at equilibrium and non-equilibrium condition were calculated using a full potential linear augmented plane wave plus local orbital method. The effect of Si and Ge on electronic and optical properties of Si_1-xGe_xO₂ is investigated. It was found that Si_1-xGe_xO₂ compounds could be used as a high-K in electronics devices

Related

• First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes
• From pseudo-direct hexagonal germanium to direct silicon-germanium alloys
• Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si_xGe_1-x alloys
• Theory of interstitial oxygen in silicon and germanium
• First-principles electronic-structure calculation of dangling bonds at Si/SiO₂ and Ge/GeO₂ interfaces