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Ferroelectric Antiferromagnetic Quantum Anomalous Hall Insulator in TwoDimensional van der Waals Materials

2023/02/10 by Yan Liang, Liang, Yan, Fulu Zheng +5 · 1 citation
Materials Science · Physics and Astronomy · #2D Materials and Applications #Antiferromagnetism #Computational Physics (physics.comp-ph) #Condensed matter physics #FOS: Physical sciences #Ferroelectricity #Ferromagnetism #Graphene research and applications #Macroscopic quantum phenomena #Magnetic field #Materials science #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Multiferroics #Nanotechnology #Physics #Quantum #Quantum Hall effect #Quantum anomalous Hall effect #Quantum mechanics #Realization (probability) #Topological Materials and Phenomena #Topological insulator #van der Waals force

paper · pdf · doi:10.48550/arxiv.2302.05091

published in arXiv (Cornell University) (Cornell University)

openalex publication_date 2023/02/10 · openalex created_date 2023/02/14 · openalex updated_date 2026/08/06

Abstract

Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable the realization of novel devices and thus attracts great attention. Here, we show theoretical evidence that twodimensional (2D) even-layer MnBi2Te4 allows for the simultaneous presence of intercorrelated ferroelectricity, AFM, and QAHE. Importantly, through rational van der Waals sliding, these exotic properties are strongly coupled. Such coupling could demonstrate many distinctive physics, for example, ferroelectric control of itinerant AFM phase and the sign of quantized anomalous Hall plateau.The explored phenomena and mechanism would not only enrich the research in 2D ferroelectricity and topological magnets, but also guide the design of low-consumption high-speed quantum devices.

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