2021/03/06 by E. R. MacQuarrie, MacQuarrie, E. R., Camille Chartrand +15
Engineering · Physics and Astronomy · #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices #Photorefractive and Nonlinear Optics #Quantum Physics (quant-ph) #Quantum optics and atomic interactions #physics.optics #quant-ph
paper · pdf · doi:10.48550/arxiv.2103.03998
10 pages, 9 figures
arxiv created 2021/03/06 · openalex publication_date 2021/03/06 · arxiv updated 2021/03/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized \lesssim100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.