2000/10/27 by K. E. Nagaev, K. É. Nagaev, Nagaev, K. E.
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Superconductivity (cond-mat.supr-con) #cond-mat.mes-hall #cond-mat.supr-con
paper · pdf · doi:10.48550/arxiv.cond-mat/0010442
4 pages, 4 eps figures
arxiv created 2000/10/27 · openalex publication_date 2000/10/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The shot noise in long diffusive SNS contacts is calculated using the semiclassical approach. At low frequencies and for purely elastic scattering, the voltage dependence of the noise is of the form SI = (4Δ+ 2eV)/3R. The electron-electron scattering suppresses the noise at small voltages resulting in vanishing noise yet infinite dSI/dV at V = 0. The distribution function of electrons consists of a series of steps, and the frequency dependence of noise exhibits peculiarities at ω= neV, ω= neV - 2Δ, and ω= 2Δ- neV for integer n.