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Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region

2012/09/10 by A. Kechiantz, Andrei Afanasev, Kechiantz, A. +3
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #solar cell performance optimization

paper · pdf · doi:10.48550/arxiv.1209.2041

openalex publication_date 2012/09/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The intermediate band (IB) cell is a concept of highly efficient solar cells proposed by Luque and Marti in 1997. The IB concept uses nonlinear effect of two photon absorption enforced with concentration of such photons for generation of additional photocurrent in single p-n-junction cells. In this theoretical work we demonstrate an important role of self-organized strained type-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.

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