2023/12/24 by Rui Zhou, Haiyang Zhang, Zhou, Rui +9
Physics and Astronomy · #FOS: Electrical engineering #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Signal Processing (eess.SP) #electronic engineering #information engineering
paper · pdf · doi:10.48550/arxiv.2312.15481
openalex publication_date 2023/12/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction (MTJ). Micromagnetic simulation shows that the device utilizes the chiral symmetry breaking caused by the DMI effect to induce a non-collinear spin texture under the influence of SOT current. This, combined with the perpendicular magnetic anisotropy (PMA) gradient generated by the local VCMA effect, enables deterministic switching of the MTJ state without an external field. The impact of variations in DMI strength and PMA gradient on the magnetization dynamics is analyzed.