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Light-engineered Multichannel Quantum Anomalous Hall Effect in High-order Topological Plumbene

2025/11/23 by Li, Zhe, Zhan, Fangyang, Cao, Haijun +3 · 1 citation
Physics and Astronomy · Materials Science · #Topological Materials and Phenomena #Graphene research and applications #2D Materials and Applications

paper · doi:10.48550/arxiv.2511.18520

Abstract

Floquet engineering severs as a forceful technique for uncovering high Chern numbers of quantum anomalous Hall (QAH) states with feasible tunability in high-order topologically insulating plumbene, which is readily accessible for experimental investigations. Under the irradiation of righthanded circularly polarized light, we predict a three-stage topological phase transition in plumbene, whether it is in a free-standing form or grown on h-BN. Initially, a metallic state evolves into a K(K')-valley-based QAH state with a Chern number of -8, which then decreases to -6 after the valley gap closes. Finally, a band inversion occurs at the Γ point, resulting in a multichannel QAH state with C = -3. The trigonal warping model accounts for both K(K')-valley-based and Γ-pointbased QAH states. Additionally, growing plumbene on a non-van-der-Waals substrate eliminates the K(K')-valley-based topology, leaving only the Γ-point-based QAH state with C = +3. Our findings propose the tunability of various high Chern numbers derived from high-order topological insulators, aiming to advance the next-generation dissipationless electronic devices.

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