2015/05/07 by Freddie Withers, Thomas Hardisty Bointon, Withers, Freddie +9
Materials Science · Physics and Astronomy · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #MXene and MAX Phase Materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1505.01613
Sci Rep, volume 4, DOI:10.1038/srep04967, Supporting information online
arxiv created 2015/05/07 · openalex publication_date 2015/05/07 · arxiv updated 2015/05/08 · openalex created_date 2022/09/20 · openalex updated_date 2026/07/28
We present the first study of the intrinsic electrical properties of WS2 transistors fabricated with two different dielectric environments WS2 on SiO2 and WS2 on h-BN/SiO2, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS2 with various thicknesses from single- up to four-layers and over a wide temperature range from 300K down to 4.2 K shows that disorder intrinsic to WS2 is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides.