2020/08/05 by Celso I. Fornari, Fornari, Celso I., E. Abramof +8
Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #High-pressure geophysics and materials #Materials Science (cond-mat.mtrl-sci) #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2008.02180
openalex publication_date 2020/08/05 · openalex created_date 2022/07/26 · openalex updated_date 2026/07/28
Bismuth telluride have regained significant attention as a prototype of\ntopological insulator. Thin films of high quality have been investigated as a\nbasic platform for novel spintronic devices. Low mobility of bismuth and high\ndesorption coefficient of telluride compose a scenario where growth parameters\nhave drastic effects on structural and electronic properties of the films.\nRecently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation\nhas been performed on the dynamics of defects in epitaxial films of this\nmaterial, revealing the impact of film/substrate lattice misfit on the films'\nlateral coherence. Very small lattice misfit (<0.05%) are expected to have no\ninfluence on quality of epitaxial system with atomic layers weakly bonded to\neach other by van der Waals forces, contrarily to what was observed. In this\nwork, we investigate the correlation between lattice misfit and size and\nmorphology of the film crystalline domains. Three-dimensional reciprocal-space\nmaps of film Bragg reflections obtained with synchrotron X-rays are used to\nvisualize the spatial conformation of the crystallographic domains through film\nthickness, while atomic force microscopy images provide direct information of\nthe domains morphology at the film surface.\n