Raman properties of GaSb nanoparticles embedded in SiO2 films

2002/04/01 by Liu, Fa-Min, Tianmin Wang, Jianqi Li +11
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0204031

17 pages, 3 figures, 1 table. Submitted to Journal of Physics: Condensed Matter

arxiv created 2002/04/01 · openalex publication_date 2002/04/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. Calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.

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