2014/07/17 by Debasree Chowdhury, Chowdhury, Debasree, D. Ghose +7
Engineering · Physics and Astronomy · #Ion-surface interactions and analysis #Advanced Materials Characterization Techniques #GaN-based semiconductor devices and materials
paper · pdf · doi:10.48550/arxiv.1407.4670
Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact.