2025/05/14 by Thomas Pucher, Julia Hernández-Ruiz, Pucher, Thomas +9 · 1 citation
Engineering · Materials Science · #Acoustic Wave Resonator Technologies #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Optical Coatings and Gratings #Photonic and Optical Devices
paper · pdf · doi:10.48550/arxiv.2505.09461
openalex publication_date 2025/05/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The integration of high-dielectric-constant (high-κ) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-κ dielectric layer for transition metal dichalcogenide-based 2D electronics and optoelectronics. Phlogopite's wide bandgap (~4.8 eV), high dielectric constant (~11), and large breakdown field (10 MVcm-1) enable transistors with subthreshold swings down to 100 mVdec-1, minimal hysteresis (30-60 mV) and interface trap densities comparable to state-of-the-art oxide dielectrics. Moreover, phototransistors built upon monolayer molybdenum disulfide (MoS2) and phlogopite exhibit responsivities up to 3.3x104 AW-1 and detectivities near 1010 Jones, surpassing devices based on conventional gate insulators. We further demonstrate the versatility of this natural dielectric by integrating phlogopite/MoS2 heterostructures into NMOS inverters, showcasing robust voltage gains and low-voltage operation. Our findings establish phlogopite as a promising, earth-abundant dielectric for next-generation 2D transistor technologies and high-performance photodetection.