2024/12/18 by Augustinas Galeckas, Galeckas, Augustinas, Adrian Cernescu +24
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2412.13987
openalex publication_date 2024/12/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Gallium oxide is an emerging material of interest due to its unique combination of functional properties and the existence of multiple polymorphs - α, β, γ, δ, and κ - each exhibiting distinct characteristics arising from their different lattice symmetries. Optical properties are particularly important, as they determine potential device applications and enable phase identification. However, direct comparison of optical signatures, including key parameters such as bandgaps, is hindered by inconsistent, sparse, or even missing data in the literature. To address this issue, in the present work we systematically cross-correlate optical emission and absorption features of α, β, γ, δ, and κ thin films, as well as differently oriented β-phase bulk crystals and γ/β double polymorph structures. We demonstrate that optical bandgaps and emission features scale consistently across the polymorphs when methodological uncertainties are minimized by applying identical experimental conditions and unified analysis procedures to a structurally similar set of thin film samples. In addition, we extend conventional far field optical phase identification to the nanoscale by reporting near field optical signatures of Ga2O3 polymorphs via nano FTIR. Overall, the present dataset provides a comprehensive reference of near- and far-field optical polymorph signatures to support ongoing multidisciplinary research on Ga2O3.