Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics

2025/01/06 by Bader, Joshua, Lim, Shao Qi, Inam, Faraz Ahmed +5 · 2 citations
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics)

paper · doi:10.48550/arxiv.2501.02755

Abstract

Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated circuits may enable precise control over their inherent photo-physical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium (Er³⁺) defects embedded in thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the emission characteristics of the Er³⁺-defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble Er³⁺-defects within 4H-SiCOI, providing insights into their potential for future quantum applications.

Cited by

• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Integration of Er³⁺-emitters in silicon-on-insulator nanodisks metasurface

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