2010/08/13 by S. Dzhumanov, Dzhumanov, S., Ganiev, O. K. +1
Materials Science · Physics and Astronomy · #F.2.2 #FOS: Physical sciences #I.2.7 #Physics of Superconductivity and Magnetism #Soft Condensed Matter (cond-mat.soft) #Solidification and crystal growth phenomena #Superconductivity (cond-mat.supr-con) #Theoretical and Computational Physics
paper · pdf · doi:10.48550/arxiv.1008.2256
openalex publication_date 2010/08/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a unified approach for describing the carrier localization, metal-insulator transitions (MITs) and stripe formation in high-Tc cuprates. The ground-state energy of a carrier interacting with a defect and with lattice vibrations is calculated within the continuum model and adiabatic approximation. At low doping levels, hole carriers in \rmLa-based systems with large-radius dopants are localized near the dopants with the formation of hydrogenic impurity centers.