Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

2013/11/12 by Takayuki Obata, Kenta Takeda, Obata, T. +15
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.1311.2681

openalex publication_date 2013/11/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.

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