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Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature

2017/02/13 by Min Yi, Hongbin Zhang, Yi, Min +3
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Physics of Superconductivity and Magnetism

paper · doi:10.48550/arxiv.1702.03670

openalex publication_date 2017/02/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Voltage-driven 180^∘ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180^∘ magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E) induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. Particularly K is revealed to vary linearly with respect to E and the epitaxial strain. Magnetization dynamics simulations using the so-obtained K show that both in-plane and perpendicular 180^∘ switching can be achieved by E pulses. The temperature effect renders the 180^∘ switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180^∘ switching achievable at room temperature by controlling the magnitude of E and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.

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