2015/12/04 by Anuja Chanana, Chanana, Anuja, Amretashis Sengupta +3
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1512.01417
openalex publication_date 2015/12/04 · openalex created_date 2022/10/03 · openalex updated_date 2026/07/28
Here, we report the performance of vacancy affected supercell of a hybrid\nGraphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET\nat its ballistic transport limit using Non Equilibrium Green's Function (NEGF)\nmethodology. A supercell is made of the 3p configuration of armchair nanoribbon\nthat is doped on the either side with 6 BN atoms and is also H-passivated. The\ntype of vacancies studied are mono (B removal), di (B and N atom removal) and\nhole (removal of 6 atoms) formed all at the interface of carbon and BN atoms.\nDensity Functional Theory (DFT) is employed to evaluate the material properties\nof this supercell like bandgap, effective mass and density of states (DOS).\nFurther band gap and effective mass are utilized in self-consistent\nPoissonSchrodinger calculator formalized using NEGF approach. For all the\nvacancy defects, material properties show a decrease which is more significant\nfor hole defects. This observation is consistent in the device characteristics\nas well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximum\nincrement for hole vacancy and increase is more significant becomes when the\nnumber of defects increase.\n