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The quantum Hall effect under the influence of a top-gate and integrating AC lock-in measurements

2009/05/20 by Tobias Kramer, Kramer, Tobias, Eric J. Heller +3
Computer Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Computing Algorithms and Architecture #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.0905.3286

7 pages, 5 figures

arxiv created 2009/05/20 · openalex publication_date 2009/05/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate covering a large part of the device. The gate is kept on a constant voltage, while the Hall voltage is recorded using an integrating alternating-current lock-in technique. The resulting Hall curves show inflection points at the arithmetic mean between two integer plateaus, which are not necessarily related to the distribution of the density of states within a Landau level.

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