2013/06/03 by Yuqiao Guo, Lei Shi, Shiming Zhou +2 · 5 citations
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Advanced Condensed Matter Physics #Electronic and Structural Properties of Oxides
paper · doi:10.1063/1.4808437
Near room-temperature magnetoresistance (MR) effect in ferromagnetic semiconductor La2NiMnO6 has been reported. The magnetic field dependent MR curve exhibits two distinct regions: the low-field MR which shows a rapid increase in an applied field within 200 Oe and the high-field MR which shows a relatively slow increase with the field increasing (more than 200 Oe). Based on the analyses of magnetic and electronic properties, we suggest that the low-field MR comes from the increased electron tunneling probability accompanied by the alignment of ferromagnetic domains under external field and the high-field MR is due to the suppression of scattering from the spin defects arising from the Ni/Mn antisite disorders.