2008/03/25 by Andreas Jechow, Volker Raab, V. Raab +1
Engineering · Physics and Astronomy · #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · doi:10.1364/ao.47.001447
An antireflection-coated broad-area laser diode with an emitter size of 400 microm x 1 microm and a chip length of 1500 microm is operated in a simple external cavity. For wavelength stabilization and to narrow the bandwidth a diffraction grating in a Littrow configuration is used. At an injection current of 9 A up to 6.8 W of optical output power and a resulting slope efficiency of 0.8 W/A could be achieved. Further, the bandwidth could be narrowed to 100 pm (FWHM), and a tuning range of 40 nm around 976 nm was obtained.