2003/12/03 by Hyun-Tak Kim, Byung Gyu Chae, Kim, Hyun-Tak +11
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Magneto-Optical Properties and Applications #Strongly Correlated Electrons (cond-mat.str-el) #Transition Metal Oxide Nanomaterials #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0312083
3 Pages, 4 Figures
arxiv created 2003/12/03 · openalex publication_date 2003/12/03 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO2 film, decreases with increasing temperature up to 334K. The abrupt current jump disappears above 334 K near the MIT temperature. These results suggest that the mechanism of the abrupt MIT induced by temperature is the same as that by an electric field. The magnitude of the current jump (a large current) decreases with increasing external resistance; this is an important observation in terms of applying the abrupt MIT to device applications. Furthermore, the temperature and resistance dependence of the MIT cannot be explained by the dielectric breakdown although a current jump known as breakdown is similar to that observed in an abrupt MIT.