2019/11/06 by Md Minhazul Islam, Islam, Md Minhazul, Maciej Oskar Liedke +15
Engineering · Materials Science · #FOS: Physical sciences #Ga2O3 and related materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.1911.02717
openalex publication_date 2019/11/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Advancement of optoelectronic and high-power devices is tied to the\ndevelopment of wide band gap materials with excellent transport properties.\nHowever, bipolar doping (n-type and p-type doping) and realizing high carrier\ndensity while maintaining good mobility have been big challenges in wide band\ngap materials. Here P-type and n-type conductivity was introduced in\nbeta-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation\nin the lattice without further doping. Hydrogen induced a 9-order of magnitude\nincrease of n-type conductivity with donor ionization energy of 20 meV and\nresistivity of 10-4 Ohm.cm. The conductivity was switched to p-type with\nacceptor ionization energy of 42 meV by altering hydrogen incorporation in the\nlattice. Density functional theory calculations were used to examine hydrogen\nlocation in the Ga2O3 lattice and identified a new donor type as the source of\nthis remarkable n-type conductivity. Positron annihilation spectroscopy\nconfirmed this finding and the interpretation of the results. This work\nillustrates a new approach that allows a tunable and reversible way of\nmodifying the conductivity of semiconductors and it is expected to have\nprofound implications on semiconductor field. At the same time it demonstrates\nfor the first time p-type and remarkable n-type conductivity in Ga2O3 which\nshould usher in the development of Ga2O3 devices and advance optoelectronics\nand high-power devices\n