2025/05/07 by Babichev, Andrey, Pirogov, Evgeniy, Sobolev, Maksim +10
#1300 nm #600 Technik #MBE #Medizin #VCSELs #angewandte Wissenschaften::620 Ingenieurwissenschaften::620 Ingenieurwissenschaften und zugeordnete Tätigkeiten #broad-area lasers #long-wavelength #optical modulation #short-cavity #vertical-cavity surface-emitting lasers #wafer fusion
paper · doi:10.14279/depositonce-23767
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6 cm−1), low transparency current density of ~500 A/cm2, together with 46 cm−1 modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice. Characteristic temperatures T0 and T1 were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.