2025/04/14 by Wang, Ruiqing, Zhou, Jiuren, Zheng, Siying +7 · 1 citation
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2504.10221
This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory.