2010/10/19 by Xuesong Li, Li, Xuesong, Carl W. Magnuson +9
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1010.3903
openalex publication_date 2010/10/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equivalently large grain size has not been reported yet. In this brevia, we report on a CVD process that yields graphene with domains of hundreds of micrometers, by very low pressure CVD, less than 50 mTorr, and very low precursor flow rates using methane as the source of carbon on the inside of copper foil enclosures at high temperature, around 1000 oC. The carrier mobility for the large-domain graphene films is up to 21,000 cm2/Vs.