2023/07/19 by Hojoon Ryu, Ryu, Hojoon, Junzhe Kang +13
Engineering · #Advanced Memory and Neural Computing #Advanced Sensor and Energy Harvesting Materials #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2307.10473
openalex publication_date 2023/07/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory windows of ~1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizeable dynamic ratio (125) and maintains stable multi-level states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon CMOS with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks.