Fast carrier dynamics in GaAs photonic crystals near the material band edge at room temperature

2014/10/30 by Ranojoy Bose, Jason S. Pelc, Bose, Ranojoy +7
Physics and Astronomy · #FOS: Physical sciences #Optics (physics.optics) #physics.optics

paper · pdf · doi:10.48550/arxiv.1410.8472

4 pages, 3 figures

arxiv created 2014/10/30 · arxiv updated 2014/10/31

Abstract

We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift in the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the GaAs band edge. The probe transmission is modified for an estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.

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