Development of Active Pixel Photodiode Sensors for Gamma Camera\n Application

2011/05/06 by Nur Sultan Salahuddin, Michel Paindavoine, Salahuddin, Nur Sultan +5
Engineering · #Advanced Semiconductor Detectors and Materials #CCD and CMOS Imaging Sensors #Calibration and Measurement Techniques #FOS: Computer and information sciences #Infrared Target Detection Methodologies #Other Computer Science (cs.OH)

paper · pdf · doi:10.48550/arxiv.1105.1412

openalex publication_date 2011/05/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We designed new photodiodes sensors including current mirror amplifiers.\nThese photodiodes have been fabricated using a CMOS 0.6 micrometers process\nfrom Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x\n1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square\nmillimetres. The sensor pixels show a logarithmic response in illumination and\nare capable of detecting very low blue light (less than 0.5 lux) . These\nresults allow to use our sensor in new Gamma Camera solid-state concept.\n

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