Generation and detection of non-Abelian matrix Berry phases through manipulation of electric confinement potential of a semiconductor quantum dot

2007/08/07 by S.-R. Eric Yang, Yang, S. -R. Eric, N. Y. Hwang +1
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Surface and Thin Film Phenomena #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.0708.0895

openalex publication_date 2007/08/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A matrix Berry phase can be generated and detected by \it all electric means in II-VI or III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. The resulting 2 x 2 matrix Berry phase can be characterized by two numbers of geometric origin. We investigate how these parameters depend on the shape and area of closed adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

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