2016/07/20 by Liangzhong Lin, L. Z. Lin, Zhenhua Wu +2
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1607.05821
6 pages, 6 figures
openalex publication_date 2016/07/20 · arxiv created 2016/08/23 · arxiv updated 2016/08/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a Hall bar device and a topological quantum dot is created by adding split gate electrodes closely on the QW. In sharp contrast to conventional semiconductor quantum dots, the presence or absence of topological edge states in the proposed quantum hall bar system leads to distinct propagating/insulating state of the TICs with large on/off ratio. This topological quantum dot functions as a carrier trap memory element with near perfect program/erase efficiency by proper adjusting the voltages applied to the split gates. For completeness, we also demonstrate that the Rashba spin orbit interaction in the quantum dot does not destroy the topological edge states and have negligible impact on the conductance of the quantum hall bar. The rapid oscillations in conductance can be suppressed when applying a perpendicular magnetic field in the quantum dot.