1999/09/01 by Pablo G. Bolcatto, P. G. Bolcatto, Bolcatto, Pablo G. +3
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/9909022
11 pages, 6 figures, submitted to Phys. Rev. B jan/99
arxiv created 1999/09/01 · openalex publication_date 1999/09/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which arises for the simplest and profusely adopted step-like model of the dielectric interface, we proposed a realistic (finite size) smooth profile for the dielectric interface. We have found that the excitonic binding energy can be either higher than the corresponding one to complete confinement by infinite barriers or essentially zero for a wide range of dot sizes depending on the thickness of the dielectric interface.