2025/05/27 by Olfa Dani, Johannes C. Bayer, Dani, Olfa +7
Chemistry · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2505.21675
openalex publication_date 2025/05/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The interaction between localized spins on a quantum dot and free electrons in the reservoirs forms a many-particle entangled system giving rise to the Kondo effect. Here, we investigate electron transport in the third shell of a gate-defined GaAs quantum dot. The addition energy shows a maximum at half-filling of the shell which can be described analytically with Hund's rule exchange interaction. For 7 to 11 electrons occupying the quantum dot Zero-bias anomalies characteristic for the Kondo effect are observed, but with unexpected widths. Here the quantum dot has to be described as a multi-orbital Kondo impurity with Hund's interaction. In this way this quantum dot can be seen as a model system for a Hund's coupled mixed-valence quantum impurity as appearing in Hund's metals where local ferromagnetic interactions between orbitals lead to the emergence of complex electronic states.