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Intervalley mixing of interface excitons at lateral heterojunctions

2024/08/19 by M. V. Durnev, Durnev, M. V., D. S. Smirnov +1
Materials Science · Neuroscience · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photoreceptor and optogenetics research #Quantum Dots Synthesis And Properties #Spectroscopy and Quantum Chemical Studies

paper · pdf · doi:10.48550/arxiv.2408.10170

openalex publication_date 2024/08/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

\requiremediawiki-texvc We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of K+ and K- valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of 0.2 eV⋅Å for typical heteropairs. We show that the valley mixing gives rise to the in-plane g-factor of localized electrons leading to the spin precession in the in-plane magnetic field. We further study the effects of the valley mixing on the fine structure and dynamics of excitons at type-II lateral heterojunctions. We find that the interplay of the valley mixing and long-range exchange interaction leads to the linear polarization of exciton photoluminescence along the armchair heterojunction with the degree of polarization up to 1/3 under unpolarized excitation. Application of the in-plane magnetic field of the order of 10-100 mT in any direction leads to the depolarization of the photoluminescence.

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