Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

2024/09/15 by Jie Zhou, Zhou, Jie, Daniel Vincent +35 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics) #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2409.09752

openalex publication_date 2024/09/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.

Cited by

• Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

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