Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors

2023/01/23 by Sven Mägdefessel, Mägdefessel, Sven, R. Mori +5
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Silicon and Solar Cell Technologies

paper · pdf · doi:10.48550/arxiv.2301.09371

openalex publication_date 2023/01/23 · openalex created_date 2023/01/25 · openalex updated_date 2026/07/28

Abstract

Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.

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