2009/01/12 by Huidong Xu, Andreas Amann, Xu, Huidong +5 · 1 citation
Chemistry · Engineering · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #FOS: Physical sciences #Material Science and Thermodynamics #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Theoretical and Computational Physics
paper · pdf · doi:10.48550/arxiv.0901.1672
openalex publication_date 2009/01/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study a model describing electronic transport in a weakly-coupled semiconductor superlattice with a shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the quantum wells of the superlattice and the shunt layer, and the conduction properties of the shunt layer. For a superlattice with small lateral extent and high quality shunt, static electric field domains are suppressed and a spatially-uniform field configuration is predicted to be stable, a result that may be useful for proposed devices such as a superlattice-based TeraHertz (THz) oscillators. As the lateral size of the superlattice increases, the uniform field configuration loses its stability to either static or dynamic field domains, regardless of shunt properties. A lower quality shunt generally leads to regular and chaotic current oscillations and complex spatio-temporal dynamics in the field profile. Bifurcations separating static and dynamic behaviors are characterized and found to be dependent on the shunt properties.