vix.ing · top · new · best · stats

Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure

2014/05/23 by Priyal Jain, P. Arun, Jain, Priyal +1
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Conducting polymers and applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1405.6013

arxiv created 2014/05/23 · openalex publication_date 2014/05/23 · arxiv updated 2014/05/26 · openalex created_date 2016/11/30 · openalex updated_date 2026/07/28

Abstract

The present paper discusses the influence of Tin Sulphide's grain size on the performance of ITO/PEDOT:PSS/SnS/Al structured solar cells fabricated by thermal evaporation. The grain sizes were maintained in the range of 11-18~nm by controlling the thickness of SnS films. While the open circuit voltage (Voc) was found to be a constant for this structure, Parameters such as short circuit current density (Jsc), series resistance (Rs), parallel resistance (Rp), ideality factor and the overall efficiency were found to be dependent on the SnS grain size and incident light intensity. The experimental work directly reconfirms the theoretical results and ideas raised in literature by early researchers.

Related