2013/05/15 by Joshua Shapiro, Shapiro, Joshua, Adam C. Scofield +9
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1305.3581
arxiv created 2013/05/15 · openalex publication_date 2013/05/15 · arxiv updated 2013/05/16 · openalex created_date 2022/09/02 · openalex updated_date 2026/07/28
GaAs nanopillars with 150 nm - 200 nm long axial InGaAs inserts are grown by MOCVD via catalyst-free selective-area-epitaxy (SAE). The alloy composition of the InGaAs region, as determined by room-temperature photoluminescence (PL), depends critically on the pitch and diameter of the selective-area pattern geometry. The PL emission varies based on pattern geometry from 1.0 \mum to 1.25 \mum corresponding to a In to Ga ratio from 0.15 to > 0.3. This In enrichment is explained by a pattern dependent change in the incorporation rate for In and Ga. Capture coefficients for Ga and In adatoms are calculated for each pattern pitch. As the pitch decreases, these data reveal a contest between a synergetic effect (related to nanopillar density) that increases the growth rate and a competition for available material that limits the growth rate. Gallium is more susceptible to both of these effects, causing the observed changes in alloy composition.