2005/04/08 by В. Савчук, Savchuk, V., B. Kotlyarchuk +3
Materials Science · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.cond-mat/0504200
openalex publication_date 2005/04/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO thin films is also analysed.