2025/01/15 by Guerguis, Bavley, Cuduvally, Ramya, Ost, Alexander +7
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2501.08980
The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate structural layout and varying doping types/concentration levels, this device is representative of the current challenges faced in measuring dopants within confined volumes using conventional techniques. Focused ion beam-secondary ion mass spectrometry is applied to produce large-area compositional maps with a sub-20 nm resolution, while atom probe tomography is used to extract atomic-scale quantitative dopant profiles. Leveraging the complementary capabilities of the two methods, this workflow is shown to be an effective approach for resolving nano- and micro- scale dopant information, crucial for optimizing the performance and reliability of advanced semiconductor devices.