Accessing quasi-flat f-bands to harvest large Berry curvature in NdGaSi

2025/04/17 by Saraswati, Anyesh, Sau, Jyotirmoy, Chatterjee, Sudipta +6
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2504.12784

Abstract

Bands away from the Fermi energy do not influence the electrical conduction. In typical rare-earth lanthanide compounds, the localized 4f-electrons have a weak effect on the electrical conduction, limiting their influence on the Berry curvature and, hence, the intrinsic anomalous Hall effect. However, a comprehensive study of the magnetic, thermodynamic, and transport properties of single-crystalline NdGaSi, guided by first-principles calculations, reveals a ferromagnetic ground state that induces a splitting of quasi-flat 4f-electronic bands and positions them near the Fermi energy. The observation of an extraordinarily large intrinsic anomalous Hall conductivity of 1165 Ω^-1cm^-1 implies the direct involvement of localized states in the generation of non-trivial band crossings around the Fermi energy. These results are remarkable when compared to ferrimagnetic NdAlSi, which differs only in a non-magnetic atom (a change in the principal quantum number n of the outer p orbital) with the same number of valence electrons and does not exhibit any measurable anomalous Hall conductivity.

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