2009/12/11 by Yijian Ouyang, Hongjie Dai, Ouyang, Yijian +3
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #FOS: Physical sciences #Graphene and Nanomaterials Applications #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Other Condensed Matter (cond-mat.other) #cond-mat.mes-hall #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0912.2140
22 pages, 6 figures
arxiv created 2009/12/11 · openalex publication_date 2009/12/11 · arxiv updated 2010/01/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.