2005/09/21 by E. V. Deviatov, V. T. Dolgopolov, Deviatov, E. V. +8
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0509544
5 pages, 5 figures included. Submitted to JETP Letters
arxiv created 2005/09/21 · openalex publication_date 2005/09/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible stripes arising at the sample edge in the fractional quantum Hall effect regime.