2024/09/23 by Shuhao Wu, Xinzhu Li, Wu, Shuhao +7
Materials Science · Physics and Astronomy · #Atomic and Subatomic Physics Research #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Quantum optics and atomic interactions
paper · pdf · doi:10.48550/arxiv.2409.14856
openalex publication_date 2024/09/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states.