Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?

2014/04/06 by K. Muhieddine, R. W. Lyttleton, Muhieddine, K. +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Soft Condensed Matter (cond-mat.soft) #cond-mat.mtrl-sci #cond-mat.soft

paper · pdf · doi:10.48550/arxiv.1404.1632

In press for Journal of Organic Semiconductors

arxiv created 2014/04/06 · arxiv updated 2014/04/08

Abstract

Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized crystal domains, but poor electrical performance is obtained, which we attribute to a combination of crack formation and potentially also structural transition during the anneal process. We also find that illumination has a significant positive effect on crystallization, possibly due to an optically-induced enhancement in molecular mobility during annealing. This suggests further studies of how solvent exposure, heat, substrate surface properties and particularly light exposure influence the ordering kinetics of TESADT are warranted.

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